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TIP120
TO-220 DARLING TRANSISTOR (NPN)
FEATURES
* Power application
TO-220
.114 (2.89) .102 (2.59) .406 (10.31) .394 (10.01) .155 (3.94) .147 (3.74) .184 (4.67) .176 (4.47) .054 (1.37) .046 (1.17) .012 (0.30) .000 (0.00) .491 (12.46) .475 (12.06) .350 (8.90) .335 (8.50) .156 (3.96) .140 (3.56) .054 (1.37) .046 (1.17) .543 (13.8) .528 (13.4)
MECHANICAL DATA
* * * *
Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
O
.036 (0.91) .028 (0.71) .100 (25.4) TYP .204 (5.18) .196 (4.98) .021 (0.53) .012 (0.31) .111 (2.82) .099 (2.52)
Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted ) RATINGS Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current-continutious Collector Power dissipation Thermal Resistance Storage temperature
o
SYMBOL VCBO VCEO VEBO IC Pd RqJA RqJC Tstg
LIMITS 60 60 5 5 2 62.5 1.92 -65 ~150
UNITS V V V A W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted ) CHARACTERISTICS Collector-base breakdown voltage (IC= 1mA, IE= 0) Collector-Emitter breakdown voltage (IC= 30mA, IB= 0) Collector cut-off current (VCB= 60V ,IE= 0) Collector cut-off current (VCE= 30V ,IB= 0) Emitter cut-off current (VE= -5V,IC= 0) DC current gain (VCE= 3V,IC= 0.5A) DC current gain (VCE= 3V,IO= 3A) Collector-emitter saturation voltage (IC= 3A,IB= 12mA) Collector-emitter saturation voltage (IC= 5A,IB= 20mA) Base-emitter ON voltage (IC= 3A,IB= 12mA) Output Capacitance (VCB= 10V,IE= 0, f= 0.1MHz) Note: "Fully ROHS compliant", "100% Sn plating (Pb-free)". SYMBOL V(BR)CBO VCEO(SUS) ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VCE(sat) VBE(on) MIN 60 60 1000 1000 MAX 0.2 0.5 2 2 4 2.5 200 mA mA mA V V V pF 2007-3 UNITS V
Cob
RATING AND CHARACTERISTICS CURVES (TIP120)
r(t), TRANSIENT THERMAL RESISTANCE, (NORMALIZED)
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
D =0.01 SINGLE PULSE D =0.2 D =0.1 P(pk) D =0.05 D =0.02 ZqJC = r(t) RqJC RqJC= 1.92OC/W MAX. D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk)-TC = P(pk) ZqJC(t) D =0.5
t1
t2
DUTY CYCLE, D =t1/t2
0.01 0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0 t, TIME, (mS)
10
20
50
100 200
500
1000
Figure1 THERMAL RESISTANCE
20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 1.0
DC 1mS 5mS BONDING WIRE LIMITED THERMALLY LIMITED @TC=25OC(SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVE APPLY BELOW RATED VCEO TJ=150OC 500uS 100uS
IC, COLLECTOR CURRENT, (A)
There are two limitations on the power handing ability of a transistor average junction temperature and second breakdown.Safe operating aresa curves indicate IC-VCE limits of the transistor that must be observed for reliable operation, i.e.,the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk)=150OC,TC is variable depending on conditions. Second breakdown pulse limit are valid for duty cycles to 10% provided TJ(pk)<150OC.TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
2.0
3.0
5.0 7.0
10
20
30
50
70 100
Figure2 ACTIVE-REGION SAFE OPERATING AREA
10K
TC= 25 C VCE= 40 Vdc
O
VCE, COLLECTOR-EMITTER VOLTAGE, (V)
300
hFE, SMALL-SIGNAL CURRENT GAIN
C, CAPACITANCE, (pF)
5K 3K 2K 1K 500 300 200 100 50 30 20 10 1.0
TJ= 25 C
O
IC= 3.0 Adc
200
Cob
100 70 50
Cjb
2.0
5.0
10
20
50
100 200
500 1K
30
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
Figure3 Small-Signal Current Gain
f, FREQUENCY, (KHz)
Figure4 CAPACITANCE
VR, REVERSE VOLTAGE, (V)
RATING AND CHARACTERISTICS CURVES (TIP120)
VCE, COLLECTOR-EMITTER VOLTAGE, (V)
20K 10K
VCE= 4.0 V
3.0
IC= 2.0A 4.0A 6.0A
TJ= 25 C
O
hFE, DC CURRENT GAIN
5K 3K 2K 1K 500 300 200 0.1
TJ= 150 C TJ= 25 C TJ= -55 C
O O
O
2.6
2.2 1.8 1.4
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
Figure5 DC CURRENT GAIN
IC, COLLECTOR CURRENT, (A)
Figure6 COLLECTOR SATURATION REGION
IB, BASE CURRENT, (A)
3.0
TJ= 25OC
2.5
V, VOLTAGE, (V)
2.0
1.5
VBE(sat) @ IC/IB =250 VBE @ VCE =4.0V
1.0
VCE(sat) @ IC/IB =250
0.5 0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0
7.0 10
Figure7 "ON" VOLTAGES
IC, COLLECTOR CURRENT, (A)
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures.

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